China Education Equipment Purchasing Network News: According to recent news from the American Physicists Organization Network, because the large pixels arranged on the matrix do not support higher readout speeds, the traditional "complementary metal oxide semiconductor" (CMOS) image sensor Suitable for low light brightness applications such as fluorescent lamps. A new optoelectronic component developed by the Fraunhofer Institute in Germany can speed up this readout process and result in better image quality. At present, the technology has applied for a patent and is expected to be officially put into production next year.

CMOS image sensors have long been the main solution for digital photography. They are more economical than other existing sensors, and they are also excellent in energy consumption and processing. Therefore, mobile phone and digital camera manufacturers almost always apply CMOS chips to their products. This not only reduces the demand for batteries in digital products, but also makes it possible to produce more and smaller cameras.

However, these optical semiconductor chips have reached their limits. When the volume of consumer electronic products is getting smaller and smaller, the size of pixels is also reduced to about 1 micron. However, specific applications require larger pixels that exceed 10 microns, especially in areas where light is very limited, such as X-ray photography or astronomy research, and larger pixels can compensate for the lack of light. Needle photodiodes (PPD) can be used to convert optical signals into electrical pulses. Such optoelectronic components are critical for image processing and can also be used as a part of CMOS chips. "However, when the pixel exceeds a certain size, PPD will cause speed problems. Low-brightness applications require a higher image rate, but the readout speed using PPD is significantly lower." Fraunhofer Institute of Microelectronics and Werner Blochhead, head of the IMS system department, explained.

Researchers have now proposed a solution to this problem, and they have developed a new type of photoelectric component called "Lateral Drift Field Photodetector" (LDPD). In this module, high-speed incident light can generate charge carriers at the readout point, and with the help of PPD, electrons can be diffused to the exit. This process is relatively slow, but it is sufficient for multiple applications.

In order to produce new components, the researchers improved the manufacturing process of the currently used CMOS chips based on the 0.35 micron standard. Blockhead said that the additional LDPD components will not damage the characteristics of other components, using simulation calculations, experts will manage them to meet these needs. At present, the prototype of the new high-speed CMOS image sensor has been formed, and it is expected to be approved next year to start mass production.

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